Analysis of Polarization Charge on III-V Compound Materials for HEMT Devices

  • May Nwe Myint Aye Mandalay Technological University
  • Than Htike Aung
  • Win Zaw Hein
Keywords: Polarization Charge Analysis, III-V Compounds, HEMT Devices, Numerical Analysis, MATLAB Code

Abstract

The paper presents the polarization charge analysis on III-V compound materials for HEMT Devices. The mathematical model for polarization charge analysis is derived from the experimental outcomes from the laboratory. The electron density in the channel of HEMT devices and the current versus polarization charges are demonstrated based on the numerical analysis. According to the numerical results, the results could be proved to fabricate the real devices in practical applications. The numerical analyses could be carried out by using MATLAB language.

Downloads

Download data is not yet available.

Author Biographies

May Nwe Myint Aye, Mandalay Technological University

Department of Electronic Engineering, Mandalay Technological University Patheingyi 5071, Mandalay Region, Republic of the Union of Myanmar .

Department of Electronic Engineering, Technological University (Lashio) Shan State, Republic of the Union of Myanmar.

Than Htike Aung

Department of Electronic Engineering, Mandalay Technological University Patheingyi 5071, Mandalay Region, Republic of the Union of Myanmar.

Win Zaw Hein

Department of Electronic Engineering, Mandalay Technological University Patheingyi 5071, Mandalay Region, Republic of the Union of Myanmar

References

J. Kuzmík and A. Georgakilas, “Proposal of high-electron mobility transistors with strained InN channel,” IEEE Transactions on Electron Devices, vol. 58, no. 3, pp. 720–724, 2011.

Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R.Wang, F. Faria, T. Fang, B. Song, X. Gao, et al., “InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 988–990, 2012.

S. K. O’Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, “Steady-state and transient electron transport within bulk wurtzite indium nitride: an updated semiclassical three-valley Monte Carlo simulation analysis,” Applied Physics Letters, vol. 87, no. 22, p. 222103, 2005.

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, “Band gap of hexagonal InN and InGaN alloys,” physica status solidi (b), vol. 234, no. 3, pp. 787–795, 2002.

G. Bhuiyan, A. Hashimoto, and A. Yamamoto, “Indium nitride (InN): a review on growth, characterization, and properties,” Journal of Applied Physics, vol. 94, no. 5, pp. 2779–2808, 2003.

K. S. A. Butcher and T. L. Tansley, “InN, latest development and a review of the band-gap controversy,” Superlattices and Microstructures, vol. 38, no. 1, pp. 1–37, 2005.

J. Wu and W. Walukiewicz, “Band gaps of InN and group III nitride alloys,” Superlattices and Microstructures, vol. 34, no. 1, pp. 63–75, 2003.

Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” Journal of Applied Physics, vol. 89, no. 11, pp. 5815–5875, 2001.

Z. Yarar, “Transport and mobility properties of wurtzite InN and GaN,” physica status solidi (b), vol. 244, no. 10, pp. 3711–3718, 2007.

Published
2019-08-08
How to Cite
Myint Aye, M. N., Than Htike Aung, & Win Zaw Hein. (2019). Analysis of Polarization Charge on III-V Compound Materials for HEMT Devices. IJRDO - Journal of Electrical And Electronics Engineering (ISSN: 2456-6055), 5(7), 31-35. Retrieved from https://ijrdo.org/index.php/eee/article/view/3127